New technology for flash memory?

According to a news published at Ars Technica, Japanese researchers announced a new technology for flash memory that allow a much longer duration and a lower power consumption. This is obtained using the so-called Ferroelectric Gate Field-Effect Transistors (FeFETs) instead of traditional MOSFETS.

According to scientists, these new chips have demonstrated a durability of 10 million write and erase cycles, whereas current NAND products are typically rated in the tens or hundreds of thousands of cycles. Moreover, the ferroelectric components are able to retain data for a longer time compared to the current technology.


Currently the technology is still under development, so there is no insight about if and when it will be available in the market, nor about prices.


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