One of the current problems of next gen optical devices' widespread is related to technical difficulties and high costs of blue laser production.
According to the article published by EE Times:
Shimei Semiconductor Co. has developed a blue LED grown on a silicon wafer that it plans to make available by next April.
Using silicon wafers as a substrate for GaN epitaxy could drastically lower the cost, simplify LED structure, extend the lifetime and enable the integration of an optical device in CMOS circuits.
This new technology, together with the possibility to produce hybrid players, will help the distribution of Hi Definition devices avoiding to end-consumers in another "Betamax vs VHS" nightmare 😉
