Toshiba announced important breakthroughs in key technologies for magnetoresistive random access memory (MRAM), a promising, next-generation semiconductor memory device, which opens the way to giga-bits capacity. The company has successfully fabricated a MRAM memory cell integrating the new technologies and verified its stable performance.
MRAM is a highly anticipated next-generation non-volatile semiconductor memory device that offers fast random write/access speeds, enhances endurance in operation with very low power consumption.
Some more detailed (and rather technical) information are available at Toshiba.
